gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 1 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 features ?? gan on sic depletion-mode transistor technology ?? internally matched ?? common-source configuration ?? broadband class ab operation ?? rohs* compliant and 260 c reflow compatible ?? +50 v typical operation ?? mttf of 5.3 * 10 6 hours applications ?? l-band pulsed radar typical rf performance under standard operating conditions, p out = 500w (peak) freq. p in gain i d eff. rl droop +1db od (mhz) (w) (db) (a) (%) (db) (db) (w) 1200 5.15 19.86 17.7 56.2 -12.7 0.29 568 1250 5.35 19.69 16.7 59.5 -10.3 0.30 561 1300 5.69 19.43 17.2 57.9 -10.9 0.33 554 1350 5.86 19.31 17.9 55.7 -15.3 0.36 547 1400 5.85 19.22 18.1 54.8 -17.5 0.38 549 MAGX-001214-500L00 magx-001214-500l0s description the MAGX-001214-500L00 is a gold metalized matched gallium nitride (gan) on silicon carbide (sic) rf power transistor optimized for pulsed l-band radar applications. using state of the art wafer fabr ication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today?s demanding application needs. high breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. * restrictions on hazardous substanc es, european union directive 2002/95/ec. part number description MAGX-001214-500L00 500 w gan power transistor (flanged) magx-001214-500l0s 500 w gan power transistor (flangeless) magx-001214-sb3ppr 1.2 - 1.4 ghz evaluation board ordering information
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 2 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 parameter limit supply voltage (v dd ) +65 v supply voltage (v gs ) -8 to -2 v supply current (i dmax ) 21.5 a input power (p in ) p in (nominal) + 3 db absolute max. junction/channel temp 200 oc mttf 600 years pulsed power dissipation at 85 oc 583 w thermal resistance, (t j = 70 oc) v dd = 50 v, i dq = 400 ma, pout = 500 w, 300 s pulse / 10% duty 0.30 oc/w operating temp -40 to +95 oc storage temp -65 to +150 oc mounting temperature see solder reflow profile esd min. - charged device model (cdm) 4000 v esd min. - human body model (hbm) 1300 v 1. operation of this device above any one of these parameters may cause permanent damage. 2. input power limit is +3db over nominal drive required to achieve p out = 500w. 3. channel temperature directly affect s a device's mttf. channel temperature sh ould be kept as low as possible to maximize lifetime. 4. for saturated performance it recommended that the sum of (3*v dd + abs(v gg )) <175 v. parameter test conditions symbol min. typ. max. units input capacitance not applicable - input matched c iss n/a n/a n/a pf output capacitance v ds = 50 v, v gs = -8 v, f = 1 mhz c oss - 55 - pf feedback capacitance v ds = 50 v, v gs = -8 v, f = 1 mhz c rss - 5.5 - pf dc characteristics parameter test conditions symbol min. typ. max. units drain-source leakage current v gs = -8 v, v ds = 175 v i ds - 1.0 30 ma gate threshold voltage v ds = 5 v, i d = 75 ma v gs (th) -5 -3.1 -2 v forward transconductance v ds = 5 v, i d = 17.5 ma g m 12.5 19.2 - s dynamic characteristics absolute maximum ratings 1, 2, 3, 4
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 3 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 electrical specifications: t a = 25 c test fixture impedances parameter test conditions symbol min. typ. max. units rf functional tests (v dd = 50 v; i dq = 400 ma; 300 s / 10%; 1200 - 1400 mhz) input power p out = 500 w peak (50 w avg) p in - 6 8.9 wpk power gain p out = 500 w peak (50 w avg) g p 17.5 19.2 - db drain efficiency p out = 500 w peak (50 w avg) d 50 56 - % load mismatch stability p out = 500 w peak (50 w avg) vswr-s - 3:1 - - load mismatch tolerance p out = 500 w peak (50 w avg) vswr-t - 5:1 - - pulse droop p out = 500 w peak (50 w avg) droop - 0.4 0.7 db f (mhz) z if ( ? ) z of ( ? ) 1200 1.2 - j1.2 1.8 + j0.5 1250 1.2 - j0.9 1.9 + j0.4 1300 1.3 - j0.6 2.0 + j0.3 1350 1.4 - j0.3 1.9 + j0.2 1400 1.6 + j0.0 1.7 + j0.1 parameter test conditions symbol min. typ. max. units extended pulse width conditions (v dd = 42 v; i dq = 400 ma; 1.0 ms / 10%; 1200 - 1400 mhz) typical rf data input power p out = 375 w peak (37.5 w avg) p in - 5.3 - wpk power gain p out = 375 w peak (37.5 w avg) g p - 18.5 - db drain efficiency p out = 375 w peak (37.5 w avg) d - 55 - %
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 4 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 rf power transfer curve (out put power vs. input power) rf power transfer curve (drain efficiency vs. output power) 100 200 300 400 500 600 700 12345678910 p out (w) p in (w) 1200 mhz 1300 mhz 1400 mhz 30 40 50 60 70 100 200 300 400 500 600 700 drain eff. (%) p out (w) 1200 mhz 1300 mhz 1400 mhz
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 5 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 typical rf data with ?extended pulse? conditions: 1.0 ms pulse, 10% duty v dd = 42 v, i dq = 400 ma note that drain voltage and rf output power is de-rated to keep junction temperature within acceptable levels. 150 225 300 375 450 525 123456789 p out (w) p in (w) 1200 mhz 1300 mhz 1400 mhz
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 6 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 test fixture circuit dimensions test fixture assembly contact factory for gerber file or additional circuit information.
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 7 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 outline drawing MAGX-001214-500L00 turning the device on 1. set v gs to the pinch-off (v p ), typically -5 v 2. turn on v ds to nominal voltage (50 v) 3. increase v gs until the i ds current is reached 4. apply rf power to desired level turning the device off 1. turn the rf power off 2. decrease v gs down to v p 3. decrease v ds down to 0 v 4. turn off v gs correct device sequencing m/a-com gx1214-500l lot no. / ser no.
gan on sic hemt pulsed power transistor 500w peak, 1200-1400 mhz, 300 s pulse, 10% duty MAGX-001214-500L00 magx-001214-500l0s 8 m/a-com technology solutions inc. and its affiliates reserve the ri ght to make changes to the product(s) or information contain ed herein wi thout notice. visit www.macomtech.com for additional data sheets and product information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 rev. v1 outline drawing magx-001214-500l0s m/a-com gx1214-500ls lot no. / ser no.
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